The 15th National Conference on Molecular Beam Epitaxy (MBE) will be held on October 10-13, 2023 in Fenhu High-tech Industrial Development Zone, Jiangsu Province (Wyndham Grand Suzhou Fenhu). Atoman Semiconductor Technology Co., Ltd. (hereinafter referred to as "Atoman") and DCA, the world's leading MBE manufacturer, will participate in the event.

Being customer-centric, Atoman provides customers with tailor-made innovative solutions and creates a comprehensive three-dimensional ecological chain. We are committed to being the most reliable expert for our customers, helping customers overcome business challenges and achieve sustainable growth. Atoman brings together top talents in the field of MBE, and joins hands with DCA to develop and master MBE system technology suitable for industrial-grade semiconductor production. We offer comprehensive solutions for compound semiconductor materials including GaAs, InP, GaN etc., supporting the high-quality development in various industries, such as optical communication, 5G, data centers, new energy, and Micro-LED. 

We look forward to meeting with you in Fenhu to discuss the new progress, new dynamics and new achievements in MBE and related fields in China, exchange the problems and future development direction in the development of MBE in China, in order to promote the development of MBE technology and science and technology in its related fields, and write a new chapter in MBE development.

Mr. Zhou Junming, Chief Scientist of Atoman, researcher of the Institute of Physics, Chinese Academy of Sciences, and one of the founders of MBE technology in China, will attend the conference and give a plenary speech with the theme of "Hybrid MBE Technology for Growing GaN-based Materials".

Abstract: As a third-generation semiconductor, GaN can not only be used to prepare LEDs and LDs in the visible and ultraviolet bands, but also shows excellent performance in power electronics and RF devices. As GaN substrates are limited by price and size, heteroepitaxy on SiC, sapphire and Si substrates has attracted much attention from the industry. So far, the industrial growth technology of GaN-based materials basically adopts MOCVD. In the growth of GaN materials by MBE technology, hybrid MBE is a promising technology.

Professor Peng Changsi, executive Deputy Director of Atoman’s R&D Center, will also deliver an invited speech on "MBE growth in-situ and synchronous, lattice-free laser nano-structure preparation and lithography solutions" at the breakout sessions.