Atoman joined hands with DCA to attend the 15th National Molecular Beam Epitaxy (MBE) Academic Conference
From October 10th to 13th, 2023, Atoman, in collaboration with the global-leading MBE equipment manufacturer DCA, participated in the 15th National Molecular Beam Epitaxy (MBE) Academic Conference. This event brought together over 500 professionals from research institutes, universities, upstream and downstream MBE equipment manufacturers, and other industry stakeholders in China. The purpose of this conference was to explore the future development directions of MBE technology in China and expand its application in various fields.
During the conference, the Atoman booth attracted numerous attendees, fostering valuable interactions and knowledge exchange.
Booth and product introduction
Renowned as one of the founding figures of MBE technology in China, Mr. Zhou Junming, a researcher at the Institute of Physics, Chinese Academy of Sciences, and Chief Scientist at Atoman, delivered the plenary speech with the theme "Hybrid MBE Technology for Growing GaN-Based Materials." Mr. Zhou's presentation centered around the hybrid MBE equipment technology and its potential in the production of related GaN devices, garnering significant attention from the conference participants. Mr. Zhou Junming remarked, "Hybrid MBE technology is pivotal for achieving high-quality GaN-based material growth, and its distinctive advantages in the development of N-polar HEMTs offer new avenues for the research and development of next-generation electronic devices. As the first domestic enterprise to transition MBE technology for growing GaN-based materials from research to industrialization, Atoman's 3*8 production-grade hybrid MBE equipment will make a substantial contribution to the advancement of the MBE industry."
In recognition of the progress and achievements in domestic MBE technology, a naming award has been established, starting from this MBE conference. The inaugural "Zhou Junming MBE Industrialization Contribution Award" was presented to Dr. Yang Chengao from the Institute of Semiconductors, Chinese Academy of Sciences.
Additionally, Professor Peng Changsi, executive deputy director of the Atoman Research Center, was invited to deliver an invited speech at a breakout session, focusing on "MBE growth in-situ and synchronous, lattice-free laser nano-structure preparation and lithography solutions".
Looking ahead, Atoman will leverage the strengths of MBE technology in the field of GaN materials and devices. The company will offer tailored innovative solutions to customers, creates a comprehensive three-dimensional ecological chain, thus becoming the most reliable expert to assist businesses in overcoming operational challenges and achieving sustainable growth.