From July 1 to July 5, 2024, the five-day training program for new employees of Atoman Semiconductor Technology Co., Ltd. was successfully held.

Recently, Xiamen authorities conducted several on-the-spot investigation into Atoman Semiconductor Technology Co., Ltd.(hereafter referred to as Atoman), gaining deep insights into its operational status and promoting technological innovation and industrial upgrading. It shows great concern and steadfast support from government toward Atoman. 

Atoman Semiconductor Honored with“Industry Chain Breakthrough Award” and“Best Investment Value Award” On June 28th-29th, being a provider of MBE system and application services, Atoman Semiconductor was invited to participate in the 8th Jiwei Semiconductor Summit 2024.

Atoman Xiamen Epitaxy Factory successfully held its grand opening ceremony on May 13th at the Minsheng High-tech Industrial Park in Jimei District. This milestone event signifies the addition of a strong new force to the compound semiconductor industry.

Yole stated in its latest report that charging for electric vehicles (EVs) presents a relatively new business opportunity for power electronics manufacturers. As the number of charging stations increases annually, this market will be sustainable, but soon there will be issues of replacement. As long as on-board chargers (OBCs) are enabled by default in cars, AC chargers will persist. As long as data center infrastructure doesn’t get robust integration (which may take 10-15 years), OBCs still have a place in this field....

HEMTs with a Al0.25Ga0.75N channel combine record-breaking speeds with an impressive breakdown voltage. Researchers from Cornell University are claiming to have broken the speed record for AlGaN-based transistors. The team’s HEMTs, which have a T-shaped gate and an Al0.25Ga0.75N channel, have a cut-off frequency, fT, of 67 GHz, and a maximum oscillation frequency, fmax, of 166 GHz. Another asset of these transistors is an average breakdown field exceeding 2 MV cm-1. This helps to ensure a high value for Johnson’s figure of merit–the product of the breakdown voltage and fT–and highlights the potential of these device for serving in next-generation high-power RF applications. Replacing the GaN channel of a HEMT with an AlGaN alloy has much promise, as it has the potential to increase the breakdown voltage due to the highe...

Substrate and epiwafer markets are fueled by strong growth in power electronic and photonic compound semiconductors. OUTLINE ● The compound semiconductor substrate market is expected to reach US$3.3 billion in 2029, with a 17% CAGR between 2023 and 2029.● Wolfspeed, Coherent Corp., SEDI … Substrate players consistently craft new strategies to diversify their product portfolios and enhance their market presence.● Compound semiconductor technologies showcase diverse advancements across sectors: SiC , GaN , InP … Compound semiconductors have emerged as a transformative influence across various industries. SiC’s dominance in the automotive sector, especially in the domain of 800V EVs , drives a billion-dollar market. Simultaneously, GaN power electronics is expanding its presence in both the consumer and automotive fields. At Yo...

On January 8, 2024, Atoman’s 2024 annual ceremony with the theme “Go beyond yourself and have a dream” was grandly held in Shaoxing, Zhejiang Province. Atoman’s employees and guests both at home and abroad gathered together. In the river of time, every intersection carries the weight of history and the promise of the future. At this moment, Atoman stands at the intersection of time, looking back on 2023 and looking forward to 2024....

The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance.

The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

On September 22, Atoman signed a cooperation agreement with Guangzhou Third-generation Semiconductor Innovation Center of Xidian University (hereinafter referred to as "Innovation Center").

On September 22, Atoman signed a cooperation agreement with Guangzhou Third-generation Semiconductor Innovation Center of Xidian University (hereinafter referred to as "Innovation Center").