Deputy Director of R&D in GaN
Responsibilities:
1. Participate in the formulation of the company’s medium and long-term technology development plan, and making the R&D strategy on nitrides and product development plan;
2. Collect and analyze the product and technical information of domestic and foreign counterparts, formulate and implement the product and technology R&D strategy;
3. R&D team building and management, personnel recruitment and hunting;
4. Responsible for the development, commissioning and optimization of new products, new processes and new structures of nitride MBE to ensure that product development meets market demands;
5. Responsible for communications with customers interested in nitride products and analysis and solution of product-related technical problems;
6. Assist in dealing with major technical problems in the production process and provide technical support to the production department;
7. Assist in affairs related to government project application, patent application, intellectual property application and academic seminar.
Requirements:
1. Ph.D. degree, at least 10 years of R&D experience in the field of MBE;
2. Proficient in MBE technology, rich experience in the development of compound semiconductor epitaxy and devices, especially the relevant experience of nitride epitaxy and highly recognized by the industry;
3. High-quality international publications and international patent holders are preferred;
4. Rich experience in organizing and managing international teams, experience in leading international teams to complete major projects is preferred;
5. Good oral and written English, ability to read and write necessary materials and communicate with foreign manufacturers in daily work;
6. Excellent professional ethics, career-minded and adventurous spirit, strong ability to withstand pressure.
Work location:
Xiamen
Send your resume to:
zhaopin@atoman.cc
